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| ON Semiconductor ) Silicon PNP Power Transistors . . . for use in power amplifier and switching circuits, -- excellent safe area limits. Complement to NPN 2N5191, 2N5192 2N5194 2N5195* *ON Semiconductor Preferred Device II I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIII I II I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II IIII I I I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIII I II I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II IIII I I I II II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIII I II I IIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII II II IIIIIIIIIIIIIIIIIIIIIII II II I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIIIIIIII IIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIII II IIIIIIIII I I II IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII II I II IIIIIIIIIIIIIIIIIIIIIII III II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII III I I IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII IIII I I III IIIIIIIIIIIIIIIIII III I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII III I II I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIII *MAXIMUM RATINGS Rating Symbol VCEO VCB VEB IC IB 2N5194 60 60 2N5195 80 80 Unit Vdc Vdc Vdc Adc Adc Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Base Current 5.0 4.0 1.0 Total Power Dissipation @ TC = 25_C Derate above 25_C Operating and Storage Junction Temperature Range PD 40 320 Watts mW/_C _C/W TJ, Tstg -65 to +150 32 1 STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE 4 AMPERE POWER TRANSISTORS SILICON PNP 60-80 VOLTS THERMAL CHARACTERISTICS Characteristic Symbol JC Max Unit CASE 77-09 TO-225AA TYPE Thermal Resistance, Junction to Case 3.12 _C/W *ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic OFF CHARACTERISTICS Symbol Min Max Unit Collector-Emitter Sustaining Voltage (1) (IC = 0.1 Adc, IB = 0) Collector Cutoff Current (VCE = 60 Vdc, IB = 0) (VCE = 80 Vdc, IB = 0) VCEO(sus) Vdc 2N5194 2N5195 60 80 -- -- -- -- -- -- -- -- -- -- -- ICEO mAdc 2N5194 2N5195 1.0 1.0 0.1 0.1 2.0 2.0 0.1 0.1 1.0 Collector Cutoff Current (VCE = 60 Vdc, VBE(off) = 1.5 Vdc) (VCE = 80 Vdc, VBE(off) = 1.5 Vdc) (VCE = 60 Vdc, VBE(off) = 1.5 Vdc, TC = 125_C) (VCE = 80 Vdc, VBE(off) = 1.5 Vdc, TC = 125_C) Collector Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 80 Vdc, IE = 0) ICEX mAdc 2N5194 2N5195 2N5194 2N5195 ICBO mAdc 2N5194 2N5195 Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO mAdc *Indicates JEDEC Registered Data. (1) Pulse Test: Pulse Width v 300 s, Duty Cycle v 2.0%. Preferred devices are ON Semiconductor recommended choices for future use and best overall value. (c) Semiconductor Components Industries, LLC, 2002 1 April, 2002 - Rev. 10 Publication Order Number: 2N5194/D 2N5194 2N5195 hFE , DC CURRENT GAIN (NORMALIZED) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) II II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I III I I I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII *ELECTRICAL CHARACTERISTICS -- continued (TC = 25_C unless otherwise noted) Characteristic ON CHARACTERISTICS Symbol Min Max Unit DC Current Gain (2) (IC = 1.5 Adc, VCE = 2.0 Vdc) (IC = 4.0 Adc, VCE = 2.0 Vdc) hFE -- 2N5194 2N5195 2N5194 2N5195 25 20 10 7.0 100 80 -- -- Collector-Emitter Saturation Voltage (2) (IC = 1.5 Adc, IB = 0.15 Adc) (IC = 4.0 Adc, IB = 1.0 Adc) Base-Emitter On Voltage (2) (IC = 1.5 Adc, VCE = 2.0 Vdc) VCE(sat) Vdc -- -- -- 0.6 1.4 1.2 VBE(on) Vdc DYNAMIC CHARACTERISTICS Current-Gain -- Bandwidth Product (IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 MHz) *Indicates JEDEC Registered Data. (2) Pulse Test: Pulse Width v 300 s, Duty Cycle v 2.0%. fT 2.0 -- MHz 10 7.0 5.0 3.0 2.0 25C TJ = 150C VCE = 2.0 V VCE = 10 V 1.0 0.7 0.5 0.3 0.2 0.007 0.01 0.02 0.03 0.05 0.1 0.2 0.3 IC, COLLECTOR CURRENT (AMP) 0.5 1.0 2.0 3.0 4.0 -55C 0.1 0.004 Figure 1. DC Current Gain 2.0 1.6 1.2 0.8 TJ = 25C 0.4 0 0.05 0.07 0.1 IC = 10 mA 100 mA 1.0 A 3.0 A 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IB, BASE CURRENT (mA) 20 30 50 70 100 200 300 500 Figure 2. Collector Saturation Region http://onsemi.com 2 2N5194 2N5195 V, TEMPERATURE COEFFICIENTS (mV/C) 2.0 TJ = 25C 1.6 VOLTAGE (VOLTS) 1.2 0.8 0.4 VCE(sat) @ IC/IB = 10 0 0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 IC, COLLECTOR CURRENT (AMP) +2.5 +2.0 +1.5 +1.0 +0.5 0 -0.5 -1.0 -1.5 -2.0 -2.5 0.005 0.01 0.020.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 4.0 VB for VBE *VC for VCE(sat) *APPLIES FOR IC/IB hFE @ VCE TJ = -65C to +150C VBE(sat) @ IC/IB = 10 VBE @ VCE = 2.0 V 1.0 2.0 3.0 4.0 IC, COLLECTOR CURRENT (AMP) Figure 3. "On" Voltage Figure 4. Temperature Coefficients RBE , EXTERNAL BASE-EMITTER RESISTANCE (OHMS) 103 IC, COLLECTOR CURRENT ( A) 102 101 100 VCE = 30 Vdc TJ = 150C 100C REVERSE 25C ICES 0 -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 FORWARD 107 VCE = 30 V 106 IC = 10 x ICES 105 104 103 102 20 IC = 2 x ICES IC ICES 10-1 10-2 (TYPICAL ICES VALUES OBTAINED FROM FIGURE 5) 10-3 +0.4 +0.3 +0.2 +0.1 40 60 80 100 120 140 160 VBE, BASE-EMITTER VOLTAGE (VOLTS) TJ, JUNCTION TEMPERATURE (C) Figure 5. Collector Cut-Off Region Figure 6. Effects of Base-Emitter Resistance VBE(off) Vin 0 APPROX -11 V TURN-ON PULSE VCC Vin RC RB SCOPE CAPACITANCE (pF) 500 TJ = 25C 300 200 t1 t2 Cjd << Ceb APPROX +9.0 V +4.0 V RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS t1 7.0 ns 100 < t2 < 500 s t3 < 15 ns DUTY CYCLE 2.0% Vin APPROX -11 V t3 TURN-OFF PULSE 100 70 50 0.1 0.2 0.3 0.5 1.0 2.0 3.0 Ceb Ccb 5.0 10 20 30 40 VR, REVERSE VOLTAGE (VOLTS) Figure 7. Switching Time Equivalent Test Circuit Figure 8. Capacitance http://onsemi.com 3 2N5194 2N5195 2.0 1.0 0.7 0.5 t, TIME ( s) 0.3 0.2 0.1 0.07 0.05 tr @ VCC = 10 V tr @ VCC = 30 V IC/IB = 10 TJ = 25C 2.0 1.0 0.7 0.5 t, TIME ( s) 0.3 0.2 tf @ VCC = 30 V tf @ VCC = 10 V ts IB1 = IB2 IC/IB = 10 ts = ts - 1/8 tf TJ = 25C td @ VBE(off) = 2.0 V 0.03 0.02 0.2 0.3 0.5 0.7 1.0 0.05 0.07 0.1 IC, COLLECTOR CURRENT (AMP) 0.1 0.07 0.05 2.0 3.0 4.0 0.03 0.02 0.05 0.07 0.1 0.5 0.7 1.0 0.2 0.3 IC, COLLECTOR CURRENT (AMP) 2.0 3.0 4.0 Figure 9. Turn-On Time 10 IC, COLLECTOR CURRENT (AMP) 5.0 2.0 1.0 0.5 TJ = 150C 5.0 ms 1.0 ms 100 s dc Figure 10. Turn-Off Time Note 1: SECONDARY BREAKDOWN LIMIT THERMAL LIMIT @ TC = 25C BONDING WIRE LIMIT CURVES APPLY BELOW RATED VCEO 2N5194 2N5195 2.0 5.0 10 20 50 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 100 0.2 0.1 1.0 There are two limitations on the power handling ability of a transistor; average junction temperature and second breakdown. Safe operating area curves indicate I C - V CE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 11 is based on TJ(pk) = 150_C. T C is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) v 150_C. At high-case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. Figure 11. Rating and Thermal Data Active-Region Safe Operating Area 1.0 0.7 0.5 0.3 0.2 0.05 0.02 SINGLE PULSE 0.01 r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) D = 0.5 0.2 0.1 JC(max) = 3.12C/W 0.1 0.07 0.05 0.03 0.02 0.01 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 t, TIME OR PULSE WIDTH (ms) 20 30 50 100 200 300 500 1000 Figure 12. Thermal Response http://onsemi.com 4 2N5194 2N5195 DESIGN NOTE: USE OF TRANSIENT THERMAL RESISTANCE DATA tP PP PP t1 1/f t1 tP PEAK PULSE POWER = PP DUTY CYCLE, D = t1 f = A train of periodical power pulses can be represented by the model shown in Figure 13. Using the model and the device thermal response, the normalized effective transient thermal resistance of Figure 12 was calculated for various duty cycles. To find JC(t), multiply the value obtained from Figure 12 by the steady state value JC. Example: The 2N5193 is dissipating 50 watts under the following conditions: t1 = 0.1 ms, tp = 0.5 ms. (D = 0.2). Using Figure 12, at a pulse width of 0.1 ms and D = 0.2, the reading of r(t1, D) is 0.27. The peak rise in junction temperature is therefore: T = r(t) x PP x JC = 0.27 x 50 x 3.12 = 42.2_C Figure 13. http://onsemi.com 5 2N5194 2N5195 PACKAGE DIMENSIONS TO-225AA CASE 77-09 ISSUE W -B- U Q -A- 123 F M C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D F G H J K M Q R S U V INCHES MIN MAX 0.425 0.435 0.295 0.305 0.095 0.105 0.020 0.026 0.115 0.130 0.094 BSC 0.050 0.095 0.015 0.025 0.575 0.655 5 _ TYP 0.148 0.158 0.045 0.065 0.025 0.035 0.145 0.155 0.040 --MILLIMETERS MIN MAX 10.80 11.04 7.50 7.74 2.42 2.66 0.51 0.66 2.93 3.30 2.39 BSC 1.27 2.41 0.39 0.63 14.61 16.63 5 _ TYP 3.76 4.01 1.15 1.65 0.64 0.88 3.69 3.93 1.02 --- H K V G S D 2 PL 0.25 (0.010) M J R 0.25 (0.010) A M A M M B M B M STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE http://onsemi.com 6 2N5194 2N5195 Notes http://onsemi.com 7 2N5194 2N5195 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada JAPAN: ON Semiconductor, Japan Customer Focus Center 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan 141-0031 Phone: 81-3-5740-2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. http://onsemi.com 8 2N5194/D |
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